elektronische bauelemente MMBT2222AW npn silicon general purpose transistor 20-oct-2009 rev. c page 1 of 4 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free feature ? complementary pnp type available(mmbt2907aw) ? epitaxial planar die construction ? ideal for medium power amplification and switching marking code MMBT2222AW = k3p, 1p absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector to base voltage v cbo 75 v collector to emitter voltage v ceo 40 v emitter to base voltage v ebo 6 v collector currrent i c 600 ma total power dissipation p c 200 mw junction, storage temperature t j , t stg +150, -55 ~ +150 millimete r millimete r ref. min. max. ref. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40 sot-323
elektronische bauelemente MMBT2222AW npn silicon general purpose transistor 20-oct-2009 rev. c page 2 of 4 electrical characteristics at ta = 25 c characteristic test condition symbol min. max. unit collector-base breakdown voltage i c =10 a, i e =0 v (br)cbo 75 v collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)ceo 40 v emitter=base breakdown voltage i e =-10 a, i c =0 v (br)ebo 6 v collector cutoff current v cb =70v, i e =0 i cbo 100 na collector cutoff current v eb =35v, i c =0 i ceo 100 na emitter cutoff current v eb =3v, i c =0 i ebo 100 na v ce =10v, i c =-0.1ma h fe 1 35 v ce =10v, i c =1ma h fe 2 50 v ce =10v, i c =10ma h fe 3 75 v ce =10v, i c =150ma h fe 4 100 300 v ce =10v, i c =500ma h fe 5 40 dc current gain v ce =1v, i c =500ma h fe 6 35 i c =500ma, i b =50ma v ce(sat) 1 v collector-emitter saturation voltage i c =150ma, i b =15ma v ce(sat) 0.3 v i c =500ma, i b =50ma v be(sat) 2.0 v base-emitter saturation voltage i c =150ma, i b =15ma v be(sat) 1.2 v transition frequency v ce =20v, i c =20ma, f=1mhz f t 300 mhz output capacitance v cb =10v, i e =0, f=1mhz c ob 8 pf delay time t d 10 ns rise time v cc =30v, v be(off) =-0.5v i c =150ma, i b1 =15ma t r 25 ns storage time t s 225 ns fall time v cc =30v, i c =150ma i b1 =- i b2 =15ma t f 60 ns
elektronische bauelemente MMBT2222AW npn silicon general purpose transistor 20-oct-2009 rev. c page 3 of 4 characteristic curves
elektronische bauelemente MMBT2222AW npn silicon general purpose transistor 20-oct-2009 rev. c page 4 of 4 characteristic curves
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